Oxide-based memristive neuromorphic synaptic devices
نویسندگان
چکیده
منابع مشابه
3D Vertical Dual-Layer Oxide Memristive Devices for Neuromorphic Computing
Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit well-characterized analog switching characteristics and small mismatch in electrical characteristics for devices formed at the two layers. The three-dimensional (3D) ver...
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ژورنال
عنوان ژورنال: Acta Physica Sinica
سال: 2019
ISSN: 1000-3290
DOI: 10.7498/aps.68.20191262